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Assessment of absorber composition and nanocrystalline phases in CuInS2 based photovoltaic technologies by ex-situ/in-situ resonant Raman scattering measurements

Identifieur interne : 003409 ( Main/Repository ); précédent : 003408; suivant : 003410

Assessment of absorber composition and nanocrystalline phases in CuInS2 based photovoltaic technologies by ex-situ/in-situ resonant Raman scattering measurements

Auteurs : RBID : Pascal:11-0266022

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Abstract

This work describes the use of quasi-resonant Raman scattering measurements for the assessment of chemical composition and nanocrystalline phases in CuInS2 based photovoltaic technologies. Raman spectra measured in S-rich CuIn(S,Se)2 layers at a fixed wavelength of 785 nm show a strong increase in the intensity of the peaks that are related to the quasi-resonant excitation of the corresponding vibrational modes. The spectra measured at these conditions are characterised by the presence of seven bands that have been identified with four first order peaks in the 200-400 cm-1 spectral region and three second order peaks in the 550-750 cm-1 spectral region. These spectra are strongly sensitive to changes in the composition of S-rich Culn(Se,S)2 alloys. On the other hand, the strong increase in the intensity of the peaks allows the development of in-situ measurements for real time process monitoring. As an example of this application, Raman spectra have been measured at real time conditions during the growth of colloidal CuInS2 nanocrystals that are being developed for the fabrication of low cost solar cells. The data obtained corroborate the potential of quasi-resonant Raman scattering measurements for the development of ex-situ and in-situ quality control and process monitoring tools in thin film chalcopyrite photovoltaic technologies.

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Pascal:11-0266022

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<term>Absorbent material</term>
<term>Chalcopyrite</term>
<term>Chemical composition</term>
<term>Copper sulfide</term>
<term>Cost lowering</term>
<term>First order</term>
<term>In situ</term>
<term>Indium sulfide</term>
<term>Monitoring</term>
<term>Nanocrystal</term>
<term>Quality control</term>
<term>Raman scattering</term>
<term>Real time</term>
<term>Solar cell</term>
<term>Ternary compound</term>
<term>Thin film</term>
<term>Vibrational mode</term>
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<term>Matériau absorbant</term>
<term>In situ</term>
<term>Diffusion Raman</term>
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<term>Ordre 1</term>
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<term>Composé ternaire</term>
<term>Sulfure de cuivre</term>
<term>Sulfure d'indium</term>
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<front>
<div type="abstract" xml:lang="en">This work describes the use of quasi-resonant Raman scattering measurements for the assessment of chemical composition and nanocrystalline phases in CuInS
<sub>2</sub>
based photovoltaic technologies. Raman spectra measured in S-rich CuIn(S,Se)
<sub>2</sub>
layers at a fixed wavelength of 785 nm show a strong increase in the intensity of the peaks that are related to the quasi-resonant excitation of the corresponding vibrational modes. The spectra measured at these conditions are characterised by the presence of seven bands that have been identified with four first order peaks in the 200-400 cm
<sup>-1</sup>
spectral region and three second order peaks in the 550-750 cm
<sup>-1</sup>
spectral region. These spectra are strongly sensitive to changes in the composition of S-rich Culn(Se,S)
<sub>2</sub>
alloys. On the other hand, the strong increase in the intensity of the peaks allows the development of in-situ measurements for real time process monitoring. As an example of this application, Raman spectra have been measured at real time conditions during the growth of colloidal CuInS
<sub>2</sub>
nanocrystals that are being developed for the fabrication of low cost solar cells. The data obtained corroborate the potential of quasi-resonant Raman scattering measurements for the development of ex-situ and in-situ quality control and process monitoring tools in thin film chalcopyrite photovoltaic technologies.</div>
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<sub>2</sub>
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<sub>2</sub>
layers at a fixed wavelength of 785 nm show a strong increase in the intensity of the peaks that are related to the quasi-resonant excitation of the corresponding vibrational modes. The spectra measured at these conditions are characterised by the presence of seven bands that have been identified with four first order peaks in the 200-400 cm
<sup>-1</sup>
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<sup>-1</sup>
spectral region. These spectra are strongly sensitive to changes in the composition of S-rich Culn(Se,S)
<sub>2</sub>
alloys. On the other hand, the strong increase in the intensity of the peaks allows the development of in-situ measurements for real time process monitoring. As an example of this application, Raman spectra have been measured at real time conditions during the growth of colloidal CuInS
<sub>2</sub>
nanocrystals that are being developed for the fabrication of low cost solar cells. The data obtained corroborate the potential of quasi-resonant Raman scattering measurements for the development of ex-situ and in-situ quality control and process monitoring tools in thin film chalcopyrite photovoltaic technologies.</s0>
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<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="ENG">
<s0>Cost lowering</s0>
<s5>09</s5>
</fC03>
<fC03 i1="09" i2="X" l="SPA">
<s0>Reducción costes</s0>
<s5>09</s5>
</fC03>
<fC03 i1="10" i2="X" l="FRE">
<s0>Cellule solaire</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="ENG">
<s0>Solar cell</s0>
<s5>10</s5>
</fC03>
<fC03 i1="10" i2="X" l="SPA">
<s0>Célula solar</s0>
<s5>10</s5>
</fC03>
<fC03 i1="11" i2="X" l="FRE">
<s0>Contrôle qualité</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="ENG">
<s0>Quality control</s0>
<s5>11</s5>
</fC03>
<fC03 i1="11" i2="X" l="SPA">
<s0>Control de calidad</s0>
<s5>11</s5>
</fC03>
<fC03 i1="12" i2="X" l="FRE">
<s0>Nanocristal</s0>
<s5>22</s5>
</fC03>
<fC03 i1="12" i2="X" l="ENG">
<s0>Nanocrystal</s0>
<s5>22</s5>
</fC03>
<fC03 i1="12" i2="X" l="SPA">
<s0>Nanocristal</s0>
<s5>22</s5>
</fC03>
<fC03 i1="13" i2="X" l="FRE">
<s0>Composé ternaire</s0>
<s5>23</s5>
</fC03>
<fC03 i1="13" i2="X" l="ENG">
<s0>Ternary compound</s0>
<s5>23</s5>
</fC03>
<fC03 i1="13" i2="X" l="SPA">
<s0>Compuesto ternario</s0>
<s5>23</s5>
</fC03>
<fC03 i1="14" i2="X" l="FRE">
<s0>Sulfure de cuivre</s0>
<s5>24</s5>
</fC03>
<fC03 i1="14" i2="X" l="ENG">
<s0>Copper sulfide</s0>
<s5>24</s5>
</fC03>
<fC03 i1="14" i2="X" l="SPA">
<s0>Cobre sulfuro</s0>
<s5>24</s5>
</fC03>
<fC03 i1="15" i2="X" l="FRE">
<s0>Sulfure d'indium</s0>
<s5>25</s5>
</fC03>
<fC03 i1="15" i2="X" l="ENG">
<s0>Indium sulfide</s0>
<s5>25</s5>
</fC03>
<fC03 i1="15" i2="X" l="SPA">
<s0>Indio sulfuro</s0>
<s5>25</s5>
</fC03>
<fC03 i1="16" i2="X" l="FRE">
<s0>Couche mince</s0>
<s5>26</s5>
</fC03>
<fC03 i1="16" i2="X" l="ENG">
<s0>Thin film</s0>
<s5>26</s5>
</fC03>
<fC03 i1="16" i2="X" l="SPA">
<s0>Capa fina</s0>
<s5>26</s5>
</fC03>
<fC03 i1="17" i2="X" l="FRE">
<s0>Chalcopyrite</s0>
<s5>27</s5>
</fC03>
<fC03 i1="17" i2="X" l="ENG">
<s0>Chalcopyrite</s0>
<s5>27</s5>
</fC03>
<fC03 i1="17" i2="X" l="SPA">
<s0>Calcopirita</s0>
<s5>27</s5>
</fC03>
<fC03 i1="18" i2="X" l="FRE">
<s0>CuInS2</s0>
<s4>INC</s4>
<s5>82</s5>
</fC03>
<fN21>
<s1>178</s1>
</fN21>
<fN44 i1="01">
<s1>OTO</s1>
</fN44>
<fN82>
<s1>OTO</s1>
</fN82>
</pA>
<pR>
<fA30 i1="01" i2="1" l="ENG">
<s1>Photovoltaic Technical Conference Thin Film 2010 (PVTC 2010)</s1>
<s2>1</s2>
<s3>Aix-en-Provence FRA</s3>
<s4>2010-05-27</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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